Interrelated Channel Current and Oxide Leakage Current Density in a MOSFET Device
DOI:
https://doi.org/10.14738/aivp.125.17525Keywords:
MOS device, Fowler-Nordheim tunnelling, MOSFET, Effective massesAbstract
This research paper discusses the observed lower Fowler-Nordheim (FN) onset electric field in the thermal SiO2 grown on the (110) surface of the 4H-SiC semiconductor than on the (0001) oriented surface. This forms the metal-oxide-semiconductor (MOS) device which is the essential part of the MOSFET device as a transistor. First, the FN onset field is revised to a new value of 4.6 MV/cm, and then the mechanism for the lowering of the field is described.
References
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Copyright (c) 2024 Ravi Kumar Chanana
This work is licensed under a Creative Commons Attribution 4.0 International License.
