A Simple Formula to Estimate Electron Mobility in a MOSFET
DOI:
https://doi.org/10.14738/aivp.125.17649Keywords:
Silicon Carbide semiconductor, Effective mass, Interface traps, Mobility, MOSFETAbstract
This research communication gives a simple formula to estimate electron mobility in a metal-oxide-semiconductor field-effect-transistor (MOSFET). The example semiconductor chosen is the 4H-polytype of the Silicon Carbide, oriented in two faces of (0001) and (1120). The MOSFETs fabricated on these epi-surfaces have dry thermally grown amorphous silicon dioxide. The semiconductor/oxide interface is annealed in nitric oxide (NO) to incorporate Nitrogen only at the interface that passivates the interface traps to give higher channel mobility. The estimated mobility is presented in Table 1.
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Copyright (c) 2024 Ravi Kumar Chanana
This work is licensed under a Creative Commons Attribution 4.0 International License.
