Change in Energy of Quasi Particles in Materials
DOI:
https://doi.org/10.14738/aivp.1303.19025Keywords:
Quasi Particles, MOS device, Thermal Silicon Dioxide, Materials, PhototransistorsAbstract
This short communication reviews the change in energy of quasi particles in materials by providing the mathematical equations of differential calculus for the change in energy. These equations find applications in the Electron Physics related area of the Condensed Matter Physics. Photodiodes and Phototransistors are also proposed based on the finding of the intrinsic Fermi energy levels in semiconductors.
References
R.K. Chanana, Quasi particles lose energy in materials, Applied Sciences Research Periodicals, 2025. 3(3), p. 126-127.
R.K. Chanana, Theoretical finding of the properties of a Si (100) MOS device, IOSR- Journal of Applied Physics, 2022. 14(3), p. 5-6. ̅
R.K. Chanana, N-channel 4H-SiC MOSFET device on (1120) oriented epitaxial surface, IOSR-Journal of Electrical and Electronics Engg., 2022. 17(3), p. 20-22.
R.K. Chanana, The Discovery of the Universal mass-energy equivalence relation in materials having a bandgap, Transactions on Engineering and Computing Sciences, 2023. 11(6), p. 19-23.
R.K. Chanana, A simple formula to estimate electron mobility in a MOSFET, European Journal of Applied Sciences, 2024. 12(5), p. 217-219.
R.K. Chanana, A proposal of a hetero junction bipolar phototransistor, Applied Sciences Research Periodicals,
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Copyright (c) 2025 Ravi Kumar Chanana
This work is licensed under a Creative Commons Attribution 4.0 International License.
