The Receiving and Study of Celsian Electrotechnical Ceramics with Innovation One Stage Simplified Technologies in the Bao-Al2O3-Sio2 System

Authors

  • Zviad Kovziridze Georgian Technical University Institute of Bionanoceramic and nanocomposite technology Str. Costava 69, 0160 Tbilisi, Georgia
  • Maia Mshvildadze Georgian Technical University Institute of Bionanoceramic and nanocomposite technology Str. Costava 69, 0160 Tbilisi, Georgia
  • Natela Nizharadze Georgian Technical University Institute of Bionanoceramic and nanocomposite technology Str. Costava 69, 0160 Tbilisi, Georgia
  • Gulnazi Tabatadze Georgian Technical University Institute of Bionanoceramic and nanocomposite technology Str. Costava 69, 0160 Tbilisi, Georgia
  • Nino Darakhvelidze Georgian Technical University Institute of Bionanoceramic and nanocomposite technology Str. Costava 69, 0160 Tbilisi, Georgia
  • Maia Balakhashvili Georgian Technical University Institute of Bionanoceramic and nanocomposite technology Str. Costava 69, 0160 Tbilisi, Georgia

DOI:

https://doi.org/10.14738/aivp.106.13295

Keywords:

electron microscope, crystalline phase, transformation, reaction, celsian, silicate, aluminate.

Abstract

Goal: Barite based celsian ceramics with phase composition accordingly (mass%): of celsian 93; Barium Aluminate and Barium Silicate-4; Glass phase - 3, has been synthesized on the bases of local raw materials with single stage innovation technology. Method: One burn at 16000C we have take out from standard technology in which barium carbonate is used. The material displays the best properties in conditions of synthesis at 1410-1460°C Results: Its properties have been studied in complex. The material shows high resistanse to heat shock. A completely new mechanism of ceramic production is proposed. Structure of celsian ceramics in BaO-Al2O3-SiO2 system is studyd with electron microscope, X-ray, crystalline phase content, optical microscope. Water absorbtion, W%=O. Bending strength of non glazed, δ N/mm2 – 69. CLTE, α20-700 106C-1 temperature areas-3.7. Tanget of a dielectric loss angle at 50 Hz and 20°C and tg δ 10-4=107. HV GPa-18.0. Volume resistivity, ρ ohm/cm 200C-3000C=1016-1012. Elastic modulus, E N/mm2-74.5. The process of pores filling, full consolidation of material and hardness growth at comparatively high temperatures of baking interval are studied. Conclusion: High refractoriness of celsian, (1740°C), low thermal coefficient of linear expansion of synthesized materials, high thermal resistivity enable this ceramics to be recommended for introduction in electronical and electrotechnical industry.

References

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Published

2022-11-14

How to Cite

Kovziridze, Z., Mshvildadze, M., Nizharadze, N., Tabatadze, G., Darakhvelidze, N., & Balakhashvili, M. (2022). The Receiving and Study of Celsian Electrotechnical Ceramics with Innovation One Stage Simplified Technologies in the Bao-Al2O3-Sio2 System. European Journal of Applied Sciences, 10(6), 88–101. https://doi.org/10.14738/aivp.106.13295

Issue

Vol. 10 No. 6 (2022): European Journal of Applied Sciences

Section

Articles

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Copyright (c) 2022 Zviad Kovziridze, Maia Mshvildadze, Natela Nizharadze, Gulnazi Tabatadze, Nino Darakhvelidze, Maia Balakhashvili

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