CHANANA, Ravi Kumar. The Electron and Hole Effective Masses in Thermal Silicon Dioxide Determined from the Perspective of a Semiconductor. Transactions on Engineering and Computing Sciences, [S. l.], v. 11, n. 4, p. 172–174, 2023. DOI: 10.14738/tecs.114.15367. Disponível em: https://scholarpublishing.org/journals/index.php/TECS/article/view/2263. Acesso em: 6 may. 2026.